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Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 972-975

Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode

(9) Jiao, S J a,b Lu, Y M a Shen, D Z a Zhang, Z Z a Li, B H a Zhang, J Y a Yao, B a Liu, Y C a Fan, X W a

a CHANGCHUN INSTITUTE OF OPTICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NITROGEN; STIMULATED EMISSION; TEMPERATURE DISTRIBUTION; ULTRAVIOLET RADIATION; DIODES; GALLIUM NITRIDE; STRUCTURAL OPTIMIZATION; ZINC OXIDE;

CRYSTAL QUALITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ULTRAVIOLET ELECTROLUMINESCENCE;

ZINC OXIDE; HETEROJUNCTIONS;

73.40.LY; 78.60.FI; 85.60.JB; ELECTROLUMINESCENCE SPECTRA; ELECTRONS AND HOLES; P-I-N HETEROJUNCTIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ULTRAVIOLET ELECTROLUMINESCENCE;

EID: 33646172972 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200564641 Document Type: Conference Paper

Times cited : (50)

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