A new approach to white light emitting diodes of p-GaN/i-ZnO/n-ZnO heterojunctions

Applied Physics B: Lasers and Optics

Volumn 92, Issue 2, 2008, Pages 185-188

  Zhao, L ^a   Xu, C S ^a   Liu, Y X ^a   Shao, C L ^a   Li, X H ^a   Liu, Y C ^a  

^a NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AIR POLLUTION; EMISSION CONTROL; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; OPTICAL DESIGN; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

CURRENT-VOLTAGE (C-V) MEASUREMENTS; DEEP LEVELS; EMISSIONS (ASPHALT); FORWARD BIAS; I-ZNO LAYER THICKNESS; NEW APPROACHES; PULSED LASERS; RECTIFYING CHARACTERISTICS; SIMPLE METHODS; SPRINGER (CO); VIOLET EMISSION; WHITE LIGHT EMITTING DIODE (WLED); YELLOW EMISSIONS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 47749095516     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-008-3099-y     Document Type: Article

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