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Volumn 151, Issue 18, 2011, Pages 1252-1255
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Electrical and microscopic characterization of ZnO films on p-SiC substrates
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Author keywords
A. Heterojunctions; A. Nanostructures; A. Semiconductors; C. Grain boundaries
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
ELECTRIC RECTIFIERS;
GRAIN BOUNDARIES;
HETEROJUNCTIONS;
II-VI SEMICONDUCTORS;
LEAKAGE CURRENTS;
METALLIC FILMS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DIODES;
SILICON CARBIDE;
THERMAL EVAPORATION;
WIDE BAND GAP SEMICONDUCTORS;
ZINC OXIDE;
CONDUCTIVE ATOMIC FORCE MICROSCOPY;
DEVICE CHARACTERISTICS;
EFFECTIVE BARRIER HEIGHTS;
INDIVIDUAL GRAINS;
LOW-LEAKAGE CURRENT;
MICROSCOPIC CHARACTERIZATION;
RECTIFICATION RATIO;
SCHOTTKY DIODE MODELING;
SILICON COMPOUNDS;
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EID: 79961172287
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2011.05.043 Document Type: Article |
Times cited : (12)
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References (20)
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