Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal-organic chemical vapor deposition

Superlattices and Microstructures

Volumn 42, Issue 1-6, 2007, Pages 322-326

  Rogers, D ^a,b   Teherani, F H ^a   Kung, P ^c   Minder, K ^d   Razeghi, M ^d  

^a 8 Route de Chevreuse France   (France)

^b UNIVERSITÉ DE TECHNOLOGIE DE TROYES   (France)

^c MPT   (United States)

^d Northwestern University   (United States)

Author keywords

Heterojunction; LED; p n; Pulsed laser deposition; UV; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INTERFACE QUALITY; RADIATIVE NEAR BAND EDGE RECOMBINATION;

LIGHT EMITTING DIODES;

EID: 34548507011     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.04.075     Document Type: Article

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