Effect of annealing and room temperature sputtering power on optoelectronic properties of pure and Al-doped ZnO thin films

Ceramics International

Volumn 39, Issue 2, 2013, Pages 1021-1027

  Podobinski, D ^a   Zanin, S ^a   Pruna, A ^a,b,c   Pullini, D ^a  

^a CENTRO RICERCHE FIAT   (Italy)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^c UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

Author keywords

A. Films; C. Electrical properties; C. Optical properties; D. ZnO

Indexed keywords

AL-DOPED ZNO; ANNEALING PARAMETERS; ANNEALING TEMPERATURES; AZO THIN FILMS; CRYSTALLINE PROPERTIES; DEPOSITION PARAMETERS; FOUR-POINT PROBE; HALL EFFECT MEASUREMENT; OPTICAL FILTRATION; OPTOELECTRONIC PROPERTIES; RADIO FREQUENCY SPUTTERING; ROOM TEMPERATURE; SPUTTERING POWER; STRUCTURAL CHARACTERISTICS; VISIBLE REGION; ZNO; ZNO FILMS;

ABSORPTION SPECTROSCOPY; ALUMINUM; ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; METALLIC FILMS; OPTICAL PROPERTIES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84870300416     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2012.07.022     Document Type: Article

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