Growth and electronic properties of ZnO epilayers by plasma-assisted molecular beam epitaxy

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 699-703

  Murphy, T E ^a   Chen, D Y ^a   Phillips, J D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Electrical properties; Molecular beam epitaxy (MBE); ZnO

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC PROPERTIES; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

BANDGAP ENERGY; CRYSTALLINE PROPERTIES; GROWTH TEMPERATURES; RADIATIVE EMISSION;

ZINC OXIDE;

EID: 21644463446     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0006-8     Document Type: Conference Paper

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