Comparison of the ZnO:Al films deposited in static and dynamic modes by reactive mid-frequency magnetron sputtering

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 117-128

  Hong, R J ^a   Jiang, X ^a   Szyszka, B ^a   Sittinger, V ^a   Xu, S H ^a   Werner, W ^a   Heide, G ^b  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

^b CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

A3. Physical vapour deposition processes; B1. Oxides; B1. Zinc compounds

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; PHYSICAL VAPOR DEPOSITION; SUBSTRATES; ZINC OXIDE;

REACTIVE MID-FREQUENCY MAGNETRON SPUTTERING;

METALLIC FILMS;

EID: 0038286276     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01035-2     Document Type: Article

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