The Al-doping and post-annealing treatment effects on the structural and optical properties of ZnO:Al thin films deposited on Si substrate

Applied Surface Science

Volumn 256, Issue 13, 2010, Pages 4304-4309

  Ding, J J ^a   Chen, H X ^a   Ma, S Y ^a  

^a NORTHWEST NORMAL UNIVERSITY   (China)

Author keywords

Optical properties; RF magnetron sputtering; X ray diffraction; ZnO thin films

Indexed keywords

ALUMINUM; ALUMINUM COMPOUNDS; ANNEALING; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SILICON; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING TEMPERATURES; PHOTOLUMINESCENCE MEASUREMENTS; POST ANNEALING TREATMENT; RADIO FREQUENCY REACTIVE MAGNETRON SPUTTERING; RESIDUAL COMPRESSIVE STRESS; RF-MAGNETRON SPUTTERING; STRUCTURAL AND OPTICAL PROPERTIES; ZNO THIN FILM;

THIN FILMS;

EID: 77950519959     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.021     Document Type: Article

References (25)

1. Marotti R.E., Giorgi P., Machado G., and Dalchiele E.A. Sol. Energy Mater. Sol. Cells 90 (2006) 2356
2. Khomchenkoa V.S., Kryshtabb T.G., and Savina A.K. Superlattices Microstruct. 42 (2007) 94
3. Ramamoorthy K., Sanjeeviraja C., Jayachandran M., Sankaranarayanan K., Pankaj M., and Kukreja L.M. Curr. Appl. Phys. 6 (2006) 103
4. Kim K.K., Tampo H., Song J.O., Seong T.Y., Park S.J., Lee J.M., Kim S.W., Fujita S., and Niki S. Jpn. J. Appl. Phys. 44 (2005) 4776
5. Oh B.Y., Jeong M.C., Kim D.S., Lee W., and Myoung J.M. J. Cryst. Growth 281 (2005) 475
6. Huang B., Li J., Wu Y., Guo D., and Wu S. Mater. Lett. 62 (2008) 1316
7. Xu Z.Q., Deng H., Li Y., Guo Q.H., and Li Y.R. Mater. Res. Bull. 41 (2006) 354
8. Li L.J., Deng H., Dai L.P., Chen J.J., Yuan Q.L., and Li Y. Mater. Res. Bull. 43 (2008) 1456
9. Studenikin S.A., Cocivera M., Kellner W., and Pascher H. J. Lumin. 91 (2000) 223
10. Vanheusden K., Warren W.L., Seager C.H., Tallant D.R., Voigt J.A., and Gnade B.E. J. Appl. Phys. 79 (1996) 7983
11. Egehaaf H.J., and OelKrug D. J. Cryst. Growth 161 (1996) 190
12. Lin B., Fu Z., and Jia Y. Appl. Phys. Lett. 79 (2001) 943
13. Gruzintsev A.N., and Yakimov E.E. Inorg. Mater. 41 7 (2005) 725
14. Kang H.S., Kang J.S., Kim J.W., and Lee S.Y. J. Appl. Phys. 95 (2004) 1246
15. Lu J.J., Lu Y.M., Tasi S.I., Hsiung T.L., Wang H.P., and Jang L.Y. Opt. Mater. 29 (2007) 1548
16. Sanon G., Rup R., and Mansingh A. Thin Solid Films 190 (1989) 287
17. Han J.H., No Y.S., Kim T.W., Lee J.Y., Kim J.Y., and Choi W.K. Appl. Surf. Sci. 256 (2010) 1920
18. Wang C.Z., Chen Z., Hu H.Q., and Zhang D. Physica B 404 (2009) 4075
19. Ong H.C., Zhu A.X.E., and Du G.T. Appl. Phys. Lett. 80 (2002) 941
20. Yuan N.Y., Fan L.N., Li J.H., and Wang X.Q. Appl. Surf. Sci. 253 (2007) 4990
21. Liu W.W., Yao B., Li Y.F., Li B.H., Zheng C.J., Zhang B.Y., Shan C.X., Zhang Z.Z., Zhang J.Y., and Shen D.Z. Appl. Surf. Sci. 255 (2009) 6745
22. Bang K.H., Hwang D.K., and Myoung J.M. Appl. Surf. Sci. 207 (2003) 359
23. Wei X.Q., Man B.Y., Liu M., Xue C.S., Zhuang H.Z., and Yang C. Physica B 388 (2007) 145
24. Xu P.S., Sun Y.M., Shi C.S., Xu F.Q., and Pan H.B. Nucl. Instrum. Methods Phys. Res. B 199 (2003) 286
25. Prabakar K., Kim C., and Lee C. Cryst. Res. Technol. 40 (2005) 1150