ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells

Thin Solid Films

Volumn 516, Issue 21, 2008, Pages 7844-7850

  Dagamseh, A M K ^a   Vet, B ^a   Tichelaar, F D ^b   Sutta, P ^c   Zeman, M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

Author keywords

Amorphous silicon solar cells; Sputtering; XRD; Zinc oxide

Indexed keywords

ALUMINUM; ALUMINUM CLADDING; CELLS; CRYSTALLITE SIZE; CRYSTALLITES; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; CYTOLOGY; DIRECT ENERGY CONVERSION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; LIGHT METALS; METALLIC FILMS; NANOCRYSTALLINE ALLOYS; NONMETALS; OXIDE FILMS; OXIDES; PHOTOVOLTAIC CELLS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTION; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SPUTTER DEPOSITION; SWITCHING CIRCUITS; ZINC; ZINC ALLOYS; ZINC OXIDE;

AMORPHOUS SILICON SOLAR CELLS; BACK REFLECTORS; CHAMBER PRESSURES; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; DOPING EFFICIENCY; ELECTRICAL PROPERTIES; FILL FACTOR; OPTICAL GAPS; OPTICAL-; PREFERRED ORIENTATION; RF POWERING; RF-MAGNETRON SPUTTERING; S-SHAPED; SHORT-CIRCUIT CURRENT DENSITY; SOLAR CELL EFFICIENCIES; SPUTTERING; SPUTTERING CONDITIONS; SPUTTERING DEPOSITION; SUBSTRATE TEMPERATURE; SYSTEMATIC STUDY; TEMPERATURE RANGES; THIN-FILM SILICON SOLAR CELLS; XRD; ZNO:AL FILMS;

MAGNETRON SPUTTERING;

EID: 49349112137     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.05.009     Document Type: Article

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