Buffer design to minimize current collapse in GaN/AlGaN HFETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 12, 2012, Pages 3327-3333

  Uren, Michael J ^a   Moreke, Janina ^a   Kuball, Martin ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Dispersion; dynamic I V analysis (DIVA); HEMT; pulse IV

Indexed keywords

DISPERSION (WAVES); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS;

ACCEPTOR TRAPS; BUFFER DESIGN; COMPENSATION SCHEME; CURRENT COLLAPSE; DEPLETION REGION; DESIGN CONCEPT; DOPING DENSITIES; DOUBLE PULSE; DRIFT-DIFFUSION SIMULATION; FE DOPING; GROWTH DEFECTS; P-TYPE; POWER APPLICATIONS; PULSE CONDITION; PULSE I-V; QUANTITATIVE AGREEMENT; SEMI-INSULATING BUFFER; TRAP LEVELS;

ELECTRIC CURRENT MEASUREMENT;

EID: 84870294571     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2216535     Document Type: Article

References (25)

1. Y. F.Wu, A. Saxler,M.Moore, R. P. Smith, S. Sheppard, P.M. Chavarkar, T.Wisleder, U. K.Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
2. S. C. Binari, P. B. Klein, and T. E. Kazior, "Trapping effects in GaN and SiC microwave FETs," Proc. IEEE, vol. 90, no. 6, pp. 1048-1058, Jun. 2002. (Pubitemid 43785872)
3. C. Roff, J. Benedikt, P. J. Tasker, D. J.Wallis, K. P. Hilton, J. O. Maclean, D. G. Hayes, M. J. Uren, and T. Martin, "Analysis of DC-RF dispersion in AlGaN/GaN HFETs using RF engineering," IEEE Trans. Electron Devices, vol. 56, no. 1, pp. 13-19, Jan. 2009.
4. N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. A. Khan, and G. Simin, "Edge trapping mechanism of current collapse in III-N FETs," in IEDM Tech. Dig., 2004, pp. 815-818. (Pubitemid 40928419)
5. M. J. Uren, K. J. Nash, R. S. Balmer, T. Martin, E. Morvan, N. Caillas, S. L. Delage, D. Ducatteau, B. Grimbert, and J. C. De Jaeger, "Punchthrough in short-channel AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 395-398, Feb. 2006.
6. S. Piotrowicz, E. Morvan, R. Aubry, E. Chartier, O. Drisse, C. Dua, M. A. diForte-Poisson, J. C. Jaequet, O. Jardel, D. Lancereau,M. Richard, N. Sarazin, S. L. Delage, D. Floriot, Z. Ouarch, S. Bansropun, T. Bouvet, T. Dean, Y. Gourdel, D. Thenot, A. J. Hydes, J. O. MacLean, G. Lecoustre, A. Martin, and T. Reveyrand, "State of the art 58W, 38% PAE X-band AlGaN/GaN HEMTs microstrip MMIC amplifiers," in Proc. IEEE CSIC Symp., 2008, pp. 1-4.
7. K. Horio, K. Yonemoto, H. Takayanagi, and H. Nakano, "Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors," J. Appl. Phys., vol. 98, no. 12, pp. 124 502-1-124 502-7, Dec. 2005.
8. K. Horio and A. Nakajima, "Physical mechanism of buffer-related current transients and current slump in AlGaN/GaN high electron mobility transistors," J. Appl. Phys., vol. 47, pp. 3428-3433, May 2008.
9. K. Horio, H. Onodera, and A. Nakajima, "Analysis of backside-electrode and gate-field-plate effects on buffer-related current collapse in AlGaN/GaN high electron mobility transistors," Jpn. J. Appl. Phys., vol. 109, no. 11, pp. 114 508-1-114 508-7, Jun. 2011.
10. S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 81, no. 3, pp. 439-441, Jul. 2002.
11. M. J. Uren, D. G. Hayes, R. S. Balmer, D. J. Wallis, K. P. Hilton, J. O. Maclean, T. Martin, C. Roff, P. McGovern, J. Benedikt, and P. J. Tasker, "Control of short-channel effects in GaN/AlGaN HFETs," in Proc. Eur. Microw. Integr. Circuits Conf., 2006, pp. 65-68.
12. C. Poblenz, P. Waltereit, S. Rajan, S. Heikman, U. K. Mishra, and J. S. Speck, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors," J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol. 22, no. 3, pp. 1145-1149, May 2004.
13. E. Bahat-Treidel, F. Brunner, O. Hilt, E. Cho, J. Wurfl, and G. Trankle, "AlGaN/GaN/GaN:C back-barrier HFETs with breakdown voltage of over 1 kV and low R(ON) x A," IEEE Trans. Electron Devices, vol. 57, no. 11, pp. 3050-3058, Nov. 2010.
14. V. Desmaris, M. Rudzinski, N. Rorsman, P. R. Hageman, P. K. Larsen, H. Zirath, T. C. Rodle, and H. F. F. Jos, "Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2413-2417, Sep. 2006. (Pubitemid 46405174)
15. J. B. Webb, H. Tang, S. Rolfe, and J. A. Bardwell, "Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy," Appl. Phys. Lett., vol. 75, no. 7, pp. 953-955, Aug. 1999. (Pubitemid 129562141)
16. P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, and R. L. Henry, "Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy," Appl. Phys. Lett., vol. 79, no. 21, pp. 3527-3529, Nov. 2001. (Pubitemid 33600884)
17. C. P. Baylis, II and L.P. Dunleavy, "Performing and analyzing pulsed current-voltage measurements," High Freq. Electron., vol. 3, no. 5, pp. 64-69, May 2004.
18. J. Blakemore, Semiconductor Statistics. New York: Pergamon Press, 1962.
19. J. Bourgoin and M. Lannoo, Point Defects in Semiconductors II. Berlin, Germany: Springer-Verlag, 1983.
20. G. J. Riedel, J.W. Pomeroy, K. P. Hilton, J. O. Maclean, D. J.Wallis,M. J. Uren, T.Martin, and M. Kuball, "Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices," IEEE Electron Device Lett., vol. 29, no. 25, pp. 416-418, May 2008. (Pubitemid 351676297)
21. R. S. Balmer, D. E. J. Soley, A. J. Simons, J. D. Mace, L. Koker, P. O. Jackson, D. J. Wallis, M. J. Uren, and T. Martin, "On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy," Phys. Stat. Sol. (C), vol. 3, no. 6, pp. 1429-1434, Jun. 2006. (Pubitemid 44115758)
22. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. A. Shlensky, K. McGuire, E. Harley, L. E. McNeil, R. Khanna, S. J. Pearton, and J. M. Zavada, "Properties and annealing stability of Fe doped semi-insulating GaN structures," Phys. Stat. Sol. (C), vol. 2, no. 7, pp. 2476-2479, May 2005. (Pubitemid 41524950)
23. T. Aggerstam, A. Pinos, S. Marcinkevicius, M. Linnarsson, and S. Lourdudoss, "Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire," J. Electron. Mater., vol. 36, no. 12, pp. 1621-1624, Dec. 2007. (Pubitemid 350115151)
24. P. B. Klein, J.A. Freitas, Jr., S.C. Binari, and A. E. Wickenden, "Observation of deep traps responsible for current collapse in GaN metalsemiconductor field-effect transistor," Appl. Phys. Lett., vol. 75, no. 25, pp. 4016-4018, Dec. 1999. (Pubitemid 129564954)
25. J.L. Lyons, A. Janotti, and C.G. Van de Walle, "Carbon impurities and the yellow luminescence in GaN," Appl. Phys. Lett., vol. 97, no. 15, pp. 152108-1-152108-3, Oct. 2010.