Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire

Journal of Electronic Materials

Volumn 36, Issue 12, 2007, Pages 1621-1624

  Aggerstam, T ^a   Pinos, A ^a   Marcinkevicius S ^a   Linnarsson, M ^a   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Deep acceptor; Electron capture cross section; Fe; GaN; High electron mobility transistor (HEMT); Metal organic vapor phase epitaxy (MOVPE); Semi insulating

Indexed keywords

CARRIER TRAPPING; DEEP ACCEPTORS; ELECTRON CAPTURE CROSS SECTIONS; NONRADIATIVE RECOMBINATION CHANNELS;

CONCENTRATION (PROCESS); GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HOLE TRAPS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE;

IRON;

EID: 36148953872     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0202-9     Document Type: Article

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