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Volumn 2, Issue 7, 2005, Pages 2476-2479

Properties and annealing stability of Fe doped semi-insulating GaN structures

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CATHODOLUMINESCENCE; ELECTRON TRAPS; FERMI LEVEL; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

CATHODOLUMINESCENCE INTENSITY; FURNACE ANNEALING; SHEET RESISTIVITY;

GALLIUM NITRIDE;

EID: 27344445590 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200461267 Document Type: Conference Paper

Times cited : (13)

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