Room temperature preparation of high performance AZO films by MF sputtering

Ceramics International

Volumn 39, Issue 2, 2013, Pages 1135-1141

  Shi, Qian ^a,b   Zhou, Kesong ^a,b   Dai, Minjiang ^a   Hou, Huijun ^a   Lin, Songsheng ^a   Wei, Chunbei ^a   Hu, Fang ^a  

^a Guangdong General Research Institute of Industrial Technology   (China)

^b SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Al doped zinc oxide; Electrical properties; MF Sputtering; Transmittance

Indexed keywords

A-CERAMICS; AL-DOPED ZINC OXIDE; ALUMINUM-DOPED ZINC OXIDE; AZO FILMS; ELECTRICAL AND OPTICAL PROPERTIES; GRAIN SIZE; HEXAGONAL WURTZITE STRUCTURE; HIGH DEPOSITION RATES; HIGH TRANSMITTANCE; LOW SUBSTRATE TEMPERATURE; PREFERENTIAL ORIENTATION; ROOM TEMPERATURE PREPARATION; SPUTTERING POWER; TRANSMITTANCE; TRANSPARENT CONDUCTIVE OXIDES;

ALUMINUM; ALUMINUM COATINGS; CONDUCTIVE FILMS; DEPOSITS; GRAIN SIZE AND SHAPE; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE FILMS; SUBSTRATES; ZINC OXIDE; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 84870289381     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2012.07.037     Document Type: Article

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