Influence of post-annealing temperature on the properties exhibited by nanostructured in doped ZnO thin films

Thin Solid Films

Volumn 518, Issue 24 SUPPL., 2010, Pages

  Abdullah, H ^a   Norazia, M N ^a   Shaari, S ^b   Mandeep, J S ^a  

^a UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

^b INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN   (Malaysia)

Author keywords

Indium; Sol gel; Thin film; ZnO

Indexed keywords

AIR ATMOSPHERE; CHEMICAL BONDINGS; CRYSTALLIZATION MECHANISMS; DOPED ZNO; FT-IR SPECTRUM; HEXAGONAL STRUCTURES; NANO-STRUCTURED; OPTICAL EFFECTS; PHOTOLUMINESCENCE SPECTRUM; POST-ANNEALING TEMPERATURE; QUARTZ SUBSTRATE; SOL-GEL METHODS; STRUCTURAL CHARACTERISTICS; STRUCTURAL DEFECT; THIN OVERLAYS; XRD ANALYSIS; ZNO; ZNO FILMS;

CHEMICAL BONDS; CRYSTALLIZATION; GELS; INDIUM; METALLIC FILMS; MORPHOLOGY; OPTICAL PROPERTIES; QUARTZ; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

OPTICAL FILMS;

EID: 77957699598     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.087     Document Type: Article

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