Investigation of AlF3 doped ZnO thin films prepared by RF magnetron sputtering

Ceramics International

Volumn 38, Issue 1, 2012, Pages 801-809

  Houng, Boen ^a   Chen, Han Bin ^a  

^a I SHOU UNIVERSITY   (Taiwan)

Author keywords

Carrier concentration; Electrical resistivity; Magnetron sputter; ZnO thin films

Indexed keywords

CO-DOPED; CRYSTALLINITIES; DOPED FILMS; DOPED ZNO; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; MAGNETRON SPUTTER; MOSS-BURSTEIN SHIFT; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SUB-LATTICES; XRD ANALYSIS; ZNO FILMS; ZNO THIN FILM; ZNO THIN FILMS;

ALUMINUM; CARRIER CONCENTRATION; CARRIER MOBILITY; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FLUORINE; MAGNETRON SPUTTERING; METALLIC FILMS; MICROSTRUCTURE; OPTICAL PROPERTIES; SUBSTRATES; THIN FILMS; ZINC; ZINC OXIDE;

OPTICAL FILMS;

EID: 82155185179     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2011.08.007     Document Type: Article

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