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Volumn 258, Issue 4, 2011, Pages 1283-1289
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The structural properties of Al doped ZnO films depending on the thickness and their effect on the electrical properties
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Author keywords
Al doped zinc oxide; Film thickness; Transparent conducting film
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Indexed keywords
ALUMINA;
ALUMINUM OXIDE;
CARRIER CONCENTRATION;
COMPRESSIVE STRESS;
DEPOSITION;
FILM THICKNESS;
GRAIN BOUNDARIES;
GRAIN GROWTH;
GRAIN SIZE AND SHAPE;
II-VI SEMICONDUCTORS;
SEMICONDUCTOR DOPING;
ZINC OXIDE;
AL-DOPED ZINC OXIDE;
CHEMISORBED OXYGEN;
CRYSTALLINITIES;
DEPOSITION TEMPERATURES;
PROPERTIES OF AL;
R.F. MAGNETRON SPUTTERING;
STRUCTURAL AND ELECTRICAL PROPERTIES;
TRANSPARENT CONDUCTING FILMS;
FILM GROWTH;
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EID: 81555214107
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2011.07.022 Document Type: Article |
Times cited : (67)
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References (33)
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