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Volumn 258, Issue 4, 2011, Pages 1283-1289

The structural properties of Al doped ZnO films depending on the thickness and their effect on the electrical properties

Author keywords

Al doped zinc oxide; Film thickness; Transparent conducting film

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CARRIER CONCENTRATION; COMPRESSIVE STRESS; DEPOSITION; FILM THICKNESS; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; II-VI SEMICONDUCTORS; SEMICONDUCTOR DOPING; ZINC OXIDE;

EID: 81555214107     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.07.022     Document Type: Article
Times cited : (67)

References (33)
  • 5
    • 81555206517 scopus 로고    scopus 로고
    • [5] JCPDS Card No. 36-1451
    • [5] JCPDS Card No. 36-1451.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.