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Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

Novel U-shape resistive random access memory structure for improving resistive switching characteristics

(5) Ryoo, Kyung Chang a,b Oh, Jeong Hoon a,b Jung, Sunghun a Jeong, Hongsik b Park, Byung Gook a

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BEST FIT; CELL STRUCTURE; CIRCUIT BREAKER; CONDUCTING FILAMENT; DEVICE PERFORMANCE; LOW POWER; NUMERICAL SIMULATION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS;

COMPUTER SIMULATION; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79955462499 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.04DD15 Document Type: Article

Times cited : (13)

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