Forming process investigation of CuxO memory films

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 47-49

  Lv, H B ^a   Yin, M ^a   Song, Y L ^a   Fu, X F ^a   Tang, L ^a   Zhou, P ^a   Zhao, C H ^a   Tang, T A ^a   Chen, B A ^a   Lin, Y Y ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

CuxO; Forming process; Plasma induced oxidation

Indexed keywords

CHEMICAL BONDS; OXIDATION; PLASMA APPLICATIONS;

FORMING PROCESS; MEMORY FILMS; PLASMA-INDUCED OXIDATION;

SEMICONDUCTING FILMS;

EID: 37549047954     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911619     Document Type: Article

References (16)

1. 2 thin films," Appl. Phys. Lett., vol. 86, no. 26, p. 262-907, Jun. 2005.
2. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications," Appl. Phys. Lett., vol. 77, no. 1, pp. 139-141, Jul. 2000.
3. 3 films," Phys. Rev. B, Condens. Matter, vol. 62, no. 21, pp. 13 868-13 871, Dec. 2000.
4. 3 single crystals," Appl. Phys. Lett., vol. 78, no. 23, pp. 3738-3740, Jun. 2001.
5. T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, and C. Adachi, "Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum co-deposition," Appl. Phys. Lett., vol. 83, no. 6, pp. 1252-1254, Aug. 2003.
6. K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka, "Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide," Appl. Phys. Lett., vol. 89, no. 10, pp. 103 509.1-103 509.3, Sep. 2006.
7. 2 thin films," Appl. Phys. Lett., vol. 89, no. 1, pp. 012906.1-012906.3, Jul. 2006.
8. 3 thin films," Appl. Phys. Lett., vol. 88, no. 4, p. 042901, Jan. 2006.
9. y resistor practically free from the "forming" process," in Proc. ICSSDM, 2006, pp. 570-571.
10. x-metal heterostructures," Appl. Phys. Lett., vol. 90, no. 4, p. 042 107, Jan. 2007.
11. A. Chen, S. Haddad, Y. C. Wu, T. N. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. VanBuskirk, and M. Taguchi, "Non-volatile resistive switching for advanced memory applications," in IEDM Tech. Dig., 2005, pp. 746-749.
12. J. Ji and W. C. Cooper, "Electrochemical preparation of cuprous oxide powder: Part II. Process conditions," J. Appl. Electrochem., vol. 20, no. 5, pp. 826-834, Sep. 1990.
13. Z. Blank and W. Brenner, "Growth of single crystals of cuprous oxide in silica gels at near ambient temperatures," Nature, vol. 222, no. 5188, pp. 79-80, Apr. 1969.
14. Online. Available: http://srdata.nist.gov/xps/Bind_e_spec_query.asp
15. S. Lombardo, J. H. Stathis, B. P. Linder, K. L. Pey, F. Palumbo, and C. H. Tung, "Dielectric breakdown mechanisms in gate oxides," J. Appl. Phys., vol. 98, no. 12, pp. 121 301.1-121 301.36, Dec. 2005.
16. xO films for nonvolatile memory application," IEEE Electron Device Lett., to be published.