Field and temperature-dependent electronic transport parameters of amorphous and polycrystalline GaSe thin films

Physica B: Condensed Matter

Volumn 337, Issue 1-4, 2003, Pages 404-412

  Thamilselvan, M ^a   Premnazeer, K ^a   Mangalaraj, D ^a   Narayandass, Sa K ^a  

^a BHARATHIAR UNIVERSITY   (India)

Author keywords

DC conductivity; Density of states; GaSe thin films; Mott parameters; SCLC

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; EVAPORATION; FERMI LEVEL; GALLIUM COMPOUNDS; POLYCRYSTALLINE MATERIALS; THERMIONIC EMISSION;

MOTT PARAMETERS;

THIN FILMS;

EID: 0042327772     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(03)00444-7     Document Type: Article

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