GaAs metal-oxide-semiconductor device with titanium dioxide as dielectric layer: Effect of oxide thickness on the device performance

Journal of Physics D: Applied Physics

Volumn 44, Issue 15, 2011, Pages

  Kundu, Souvik ^a   Roy, Sandip Kumar ^a   Banerji, P ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTIVITY; CAPACITANCE VOLTAGE; DEVICE PERFORMANCE; DIELECTRIC CONSTANTS; DIELECTRIC LAYER; DIELECTRIC LOSS TANGENT; ELECTRICAL MEASUREMENT; FLAT-BAND VOLTAGE; FREQUENCY RANGES; FREQUENCY-DEPENDENT; GAAS; GAAS SURFACES; INTERFACE TRAP DENSITY; LOW-LEAKAGE CURRENT; METAL OXIDE SEMICONDUCTOR; NATIVE OXIDES; ORDERS OF MAGNITUDE; OXIDE CAPACITANCE; OXIDE LAYER; OXIDE THICKNESS; PHASE PURITY; SULFUR PASSIVATION; TIO;

CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC LOSSES; GALLIUM ALLOYS; GALLIUM ARSENIDE; PASSIVATION; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR SWITCHES; SULFUR; TITANIUM; TITANIUM DIOXIDE;

TITANIUM OXIDES;

EID: 79953672098     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/15/155104     Document Type: Article

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