Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1765-1768

  Shan, C X ^a   Zhang, J Y ^a   Yao, B ^a   Shen, D Z ^a   Fan, X W ^a   Choy, K L ^b  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; GOLD COATINGS; IRRADIATION; METALLIC FILMS; OPTOELECTRONIC DEVICES; OXIDE FILMS; PHOTODETECTORS; SOLAR RADIATION; SUBSTRATES; ZINC OXIDE;

ATOMIC LAYER DEPOSITED; CUTOFF WAVELENGTHS; GLASS SUBSTRATES; INTERDIGITAL; LAYER-BY LAYER MODE; MASS PRODUCTION; METAL CONTACTS; METAL SEMICONDUCTOR METAL; RESPONSIVITY; SOLAR IRRADIATION; SPECTRAL RANGE; ULTRA-VIOLET PHOTODETECTORS; ZNO; ZNO FILMS;

GOLD;

EID: 77951589467     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3098502     Document Type: Conference Paper

References (20)

1. D. C. Oh, T. Suzuki, T. Hanada, T. Yao, H. Makino, and H. J. Ko, J. Vac. Sci. Technol. B 24, 1595 (2006).
2. T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, J. Cryst. Growth 281, 513 (2005).
3. N. W. Emanetoglu, J. Zhu, Y. Chen, J. Zhong, Y. M. Chen, and Y. C. Lu, Appl. Phys. Lett. 85, 3702 (2004).
4. I. Takeuchi, W. Yang, K. S. Chang, M. A. Aronova, T. Venkatesan, R. D. Vispute, and L. A. Bendersky, J. Appl. Phys. 94, 7336 (2003).
5. S. S. Hullavarad, S. Dhar, B. Barughese, I. Takeuchi, T. Venkatesan, and R. D. Vispute, J. Vac. Sci. Technol. A 23, 982 (2005).
6. D. Park and K. Yong, J. Vac. Sci. Technol. B 26, 1933 (2008).
7. Z. Bi, J. Zhang, X. Bian, D. Wang, X. Zhang, W. Zhang, and X. Hou, J. Electron. Mater. 37, 760 (2008).
8. W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, Appl. Phys. Lett. 78, 2787 (2001).
9. H. Kim, J. Vac. Sci. Technol. B 21, 2231 (2003).
10. M. Leskela and M. Ritala, Angew. Chem., Int. Ed. 42, 5548 (2003).
11. B. S. Lim, A. Rahtu, and R. G. Gordon, Nature Mater. 2, 749 (2003).
12. S. Y. Pung, K. L. Choy, X. H. Hou, and C. X. Shan, Nanotechnology 19, 435609 (2008).
13. K. Saito, Y. Yamamoto, A. Matsuda, S. Izumi, T. Uchino, K. Ishida, and K. Takahashi, Phys. Status Solidi B 229, 925 (2002).
14. S. Jeon, S. Bang, S. Lee, S. Kwon, W. Jeong, H. Jeon, H. J. Chang, and H. H. Park, J. Electrochem. Soc. 155, H738 (2008).
15. D. M. King, X. H. Liang, C. S. Carney, L. F. Kakim, P. Li, and A. W. Weimer, Adv. Funct. Mater. 18, 607 (2008).
16. C. Yang, Y. Yu, and L. C. Li, Chin. J. Chem. Phys. 19, 137 (2006).
17. M. A. Rueter and J. M. Vohs, Surf. Sci. 262, 42 (1992).
18. JCPDS card No. 80-0075 (unpublished).
19. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).
20. D. Y. Jiang, J. Y. Zhang, Y. M. Lu, K. W. Liu, D. X. Zhao, Z. Z. Zhang, D. Z. Shen, and X. W. Fan, Solid-State Electron. 52, 679 (2008).