Vacancy-type defects introduced by gas cluster ion-implantation on Si studied by monoenergetic positron beams

Japanese Journal of Applied Physics

Volumn 51, Issue 11, 2012, Pages

  Uedono, Akira ^a   Moriya, Tsuyoshi ^b   Tsutsui, Takuro ^a   Kimura, Shogo ^a   Oshima, Nagayasu ^c   Suzuki, Ryoichi ^c   Ishibashi, Shoji ^c   Matsui, Hidefumi ^b   Narushima, Masaki ^b   Ishikawa, Yoichi ^b   Graf, Michael ^d   Yamashita, Koji ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d TOKYO ELECTRON AMERICA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION ENERGY; ANNIHILATION RADIATIONS; CLUSTER IONS; DAMAGED REGION; DEFECT SPECIES; DEFECT-FREE; DOPPLER BROADENING SPECTRA; GAS CLUSTERS; HIGH TEMPERATURE; MEAN CLUSTER SIZE; MOMENTUM DISTRIBUTIONS; MONOENERGETIC POSITRON BEAM; RAPID TRANSIENTS; VACANCY CLUSTER; VACANCY-TYPE DEFECTS;

DEFECTS; IONS; PARTICLE BEAMS; POSITRONS; SILICON;

ARGON;

EID: 84869101030     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.111801     Document Type: Article

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