Gas cluster ion beam processing equipment

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 669-672

  Bachand, J ^a   Freytsis, A ^a   Harrington, E ^a   Gwinn, M ^a   Hofmeester, N ^a   Hautala, J ^a   Mack, M E ^a   Regan, K ^a  

^a Epion Corporation   (United States)

Author keywords

Atomic measurements; Electrons; Etching; Gases; III V semiconductor materials; Ion beams; Nitrogen; Smoothing methods; Substrates; Temperature

Indexed keywords

ELECTRONS; EQUIPMENT; ETCHING; GASES; III-V SEMICONDUCTORS; ION BEAM ASSISTED DEPOSITION; ION BEAMS; ION IMPLANTATION; IONS; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TEMPERATURE;

ATOMIC MEASUREMENTS; COMMERCIAL PROCESSING; GAS CLUSTER ION BEAM PROCESSING; GAS CLUSTER ION BEAMS; PROCESS UNIFORMITY; PRODUCTION PROCESS; SMOOTHING METHODS; SUBSTRATE CHARGING;

SUBSTRATES;

EID: 84961361257     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1258094     Document Type: Conference Paper

References (10)

1. N. Toyoda, J. Matsuo and I. Yamada, "Surface processing by gas cluster ion beams", in Implantation Technology-96, 808, edited by E. Ishida, S. Banerjee, S. Mehta, T. C. Smith, M. Current, L. Larson and A. Tasch, IEEE, Piscataway (1997)
2. L. P. Allen, S. Caliendo, N. Hofmeester, E. Harrington, M. Walsh, M. Tabat, T. G. Tetreault, E. Degenkolb, C. Santeufemio and W. Skinner, "SOI Uniformity and Surface Smoothness Improvement using GCIB Processing", 2002 IEEE International SOI Conference, Williamsburg, VA, October 7-11 (2002). Abstract in Print.
3. L. P. Allen, J. Hautala, C. Santeufemio, W. Brooks, D. Fenner, T. Lucking, and M. Liu, "Gas cluster ion beam processing of SOI wafers for improved gate oxide integrity", 35, in Proceedings of the 2001 IEEE International SOI Conference, IEEE, Piscataway (2001)
4. D. B. Fenner, V. DiFilippo, J. A. Bennett, T. G. Tetreault, J. K. Hirvonen, and L. C. Feldman, "Ion-beam nano-smoothing of sapphire and silicon carbide surfaces", Proceedings of SPIE 4468, 17 (2001)
5. L. P. Allen, T. G. Tetreault, C. Santeufemio, M. Tabat, X. Li, W. Goodhue, D. Bliss, K. S. Jones, "Gas cluster ion beam smoothing of CMPscratched GaSb (100) substrates", International Conference on Alternative Substrate Technology, Cancun, Mexico, Septmber 14-17, 2002. Abstract in Print.
6. Y. Shao, T. C. Chen, D. B. Fenner and T. D. Moustakas, "Growth of GaN by ion beam cluster deposition", Nitride Semiconductor Workshop, Richmond VA, March 2002.
7. L. P. Allen, D. B. Fenner, C. Santeufemio, W. Brooks, J. Hautala, and Y. Shao, " Nanoscale surface texture by impact of accelerated condensed gas nanoparticles", SPIE International Symposium on Optical Science and Technology, July 7-11, Seattle, WA, Paper #4806-28.
8. C. Santeufemio, "AFM analysis of gas cluster ion impact craters and smoothing", Microscopy and Microanalysis Meeting Proceedings, Aug 4-8, 2002, Quebec, Canada
9. M. E. Mack, R. Becker, M. Gwinn, D. R. Swenson, R. P. Torti and R. Roby, "Design issues in cluster ion beamlines", this conference.
10. H. Zhang, Ion Sources, § 5.6 Cluster Ion Sources, Springer-Verlag, Berlin (1999)