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Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 3, 1997, Pages 1393-1403

Defects in silicon after implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy

(8) Eichler, S a Gebauer, J a Borner F a Polity, A a Krause Rehberg, R a Wendler, E b Weber, B b Wesch, W b

a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

b FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001508587 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.56.1393 Document Type: Article

Times cited : (51)

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