Characterization of helium bubbles in Si by slow positron beam

Journal of Physics: Conference Series

Volumn 225, Issue , 2010, Pages

  Maekawa, M ^a   Kawasuso, A ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DOPPLER EFFECT; ELECTRONS; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY; SCATTERING PARAMETERS; VACANCIES;

DOPPLER BROADENING SPECTRA; FIRST-PRINCIPLES CALCULATION; ION IMPLANTED SI; POSITRON LIFETIME; POSITRON TRAPPING; POSTIMPLANTATION ANNEALING; SLOW POSITRON BEAM; VACANCY CLUSTER;

POSITRONS;

EID: 78651096960     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/225/1/012032     Document Type: Conference Paper

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