A positron beam study of vacancy-impurity complexes in inert gas ion-implanted silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 724-728

  Fujinami, M ^a   Miyagoe, T ^a   Sawada, T ^a   Suzuki, R ^b   Ohdaira, T ^b   Akahane, T ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Argon; Helium; Ion implantation; Positron

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ARGON; CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; DIFFUSION; HELIUM; ION IMPLANTATION; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; TRANSMISSION ELECTRON MICROSCOPY;

DOPPLER BROADENING MEASUREMENTS;

SILICON WAFERS;

EID: 0346504189     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.153     Document Type: Conference Paper

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