He implantation induced nanovoids in crystalline Si

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 164-167

  Kilpelainen S ^a   Kuitunen, K ^a   Slotte, J ^a   Tuomisto, F ^a   Bruno, E ^b   Mirabella, S ^b   Priolo, F ^b  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

Defect formation; Ion implantation; Positrons; Semiconductors; Silicon

Indexed keywords

CRYSTALLINE MATERIALS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

B IMPLANTATION; CRYSTALLINE SI; DEFECTS FORMATION; HE IMPLANTATION; IMPLANTED SAMPLES; INTERSTITIALS; IONS IMPLANTATION; NANO-VOIDS; PROJECTED RANGE; VOID LAYER;

ION IMPLANTATION;

EID: 67349247816     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.12.010     Document Type: Article

References (17)

1. International Technology Roadmap for Semiconductors (ITRS) (2007), http://www.itrs.net/.
2. Stolk P.A., Gossmann H.-J., Eaglesham D.J., Jacobson D.C., Rafferty C.S., Gilmer G.H., Jaraiz M., Poate J.M., Luftman H.S., and Haynes T.E. J. Appl. Phys. 81 (1997) 6031
3. Pelaz L., Jaraiz M., Gilmer G.H., Gossmann H.-J., Rafferty C.S., Eaglesham D.J., and Poate J.M. Appl. Phys. Lett. 70 (1997) 2285
4. Bruno E., Mirabella S., Priolo F., Kuitunen K., Tuomisto F., Slotte J., Giannazzo F., Bongiorno C., Raineri V., and Napolitani E. J. Vac. Sci. Technol. B 26 (2008) 386
5. Mirabella S., Bruno E., Priolo F., Giannazzo F., Bongiorno C., Raineri V., Napolitani E., and Carnera A. Appl. Phys. Lett. 88 (2006) 191910
6. Bruno E., Mirabella S., Priolo F., Napolitani E., Bongiorno C., and Raineri V. J. Appl. Phys. 101 (2007) 023515
7. Bruno E., Mirabella S., Napolitani E., Giannazzo F., Raineri V., and Priolo F. Nucl. Instrum. Methods B 257 (2007) 181
8. Griffioen C.C., Evans J.H., De Jong P.C., and Van Veen A. Nucl. Instrum. Methods B 27 (1987) 417
9. Raineri V., Saggio M., and Rimini E. J. Mater. Res. 15 (2000) 1449
10. Raineri V., and Campisano S.U. Appl. Phys. Lett. 69 (1996) 1783
11. Raineri V., Fallica G., and Libertino S. J. Appl. Phys. 79 (1996) 9012
12. Roqueta F., Alquier D., Ventura L., Dubois C., and Jerisian R. Nucl. Instrum. Methods B 183 (2001) 318
13. Périchaud I., Yakimov E., Martinuzzi S., and Dubois C. J. Appl. Phys. 90 (2001) 2806
14. Peeva A., Fichtner P.F.P., da Silva D.L., Behar M., Koegler R., and Skorupa W. J. Appl. Phys. 91 (2002) 69
15. Rummukainen M., Makkonen I., Ranki V., Puska M.J., Saarinen K., and Gossmann H.-J.L. Phys. Rev. Lett. 94 (2005) 165501
16. Saarinen K., Hautojärvi P., and Corbel C. In: Stavola M. (Ed). Identification of Defects in Semiconductors (1998), Academic Press, New York
17. Kauppinen H., Corbel C., Skog K., Saarinen K., Laine T., Hautojärvi P., Desgardin P., and Ntsoenzok E. Phys. Rev. B 55 (1997) 9598