Annealing ambient on the evolution of He-induced voids in silicon

Applied Surface Science

Volumn 257, Issue 16, 2011, Pages 7036-7040

  Li, B S ^a,b   Zhang, C H ^a   Zhong, Y R ^c   Wang, D N ^c   Zhou, L H ^b   Yang, Y T ^a,b   Zhang, L Q ^a   Zhang, H H ^b   Zhang, Y ^b   Han, L H ^b  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Annealing ambient; Positron annihilation; Silicon; TEM; Void

Indexed keywords

ELECTRONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SILICON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; DOPPLER BROADENING SPECTROSCOPY; ORIENTED SILICON; POSITRON ANNIHILATION SPECTROSCOPY (PAS); POSITRON BEAMS; POST-IMPLANTATION; VOID;

ANNEALING;

EID: 79955612801     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.02.125     Document Type: Article

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