Robust, high-density zinc oxide nanoarrays by nanoimprint lithography-assisted area-selective atomic layer deposition

Journal of Physical Chemistry C

Volumn 116, Issue 44, 2012, Pages 23729-23734

  Suresh, Vignesh ^a   Huang, Meiyu Stella ^a   Srinivasan, M P ^a   Guan, Cao ^b   Fan, Hong Jin ^b   Krishnamoorthy, Sivashankar ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMER LITHOGRAPHY; CONTROLLED GROWTH; ELECTRICAL CHARACTERISTIC; FEATURE DENSITY; HIGH QUALITY; HIGH-LATERAL RESOLUTION; MATERIAL QUALITY; NANO PATTERN; NANO-IMPRINT; NANOARRAYS; NARROW DISTRIBUTION; NONVOLATILE FLASH MEMORIES; POLYMER TEMPLATES; POTENTIAL APPLICATIONS; PROCESS BENEFITS; SPATIAL RESOLUTION; SUB-100 NM; TUNNELING OXIDES; UNIFORM ARRAY; ZNO; ZNO NANOSTRUCTURES;

BLOCK COPOLYMERS; FLASH MEMORY; MECHANICAL STABILITY; NANOIMPRINT LITHOGRAPHY; NONVOLATILE STORAGE; SIZE SEPARATION; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84868700972     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp307152s     Document Type: Article

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