Nonvolatile memory devices based on ZnO/polyimide nanocomposite sandwiched between two C60 layers

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 3916-3918

  Li, Fushan ^a   Kim, Tae Whan ^a   Dong, Wenguo ^a   Kim, Young Ho ^a  

^a Hanyang University   (South Korea)

Author keywords

Hybrid nanocomposite; Memory; ZnO nanoparticles

Indexed keywords

C-V HYSTERESIS; CAPACITANCE-VOLTAGE MEASUREMENTS; CHARGE TRAP STATE; DISCHARGING PROCESS; FLAT-BAND VOLTAGE SHIFTS; HYBRID NANOCOMPOSITE; MEMORY; MEMORY EFFECTS; NON VOLATILE MEMORY DEVICES; OPERATING MECHANISMS; SELECTED AREA ELECTRON DIFFRACTION PATTERNS; THREE LAYERS; ZNO NANOCRYSTALS; ZNO NANOPARTICLES;

DATA STORAGE EQUIPMENT; DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; NANOCOMPOSITES; NONVOLATILE STORAGE; POLYIMIDES; POLYMERS; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

NANOPARTICLES;

EID: 65449169942     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.101     Document Type: Article

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