SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1852-1855

Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation

(6) Liu, Li Jung a Chang Liao, Kuei Shu a Wu, Tai Yu a Wang, Tien Ko a Tsai, Wen Fa b Ai, Chi Fong b

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b Institution of Nuclear Energy Research (Taiwan)

Author keywords

Charge retention; Charge trapping; Flash memory; High K; Plasma immersion ion implantation

Indexed keywords

CHARGE RETENTION; CONTROL SAMPLES; ELECTRICAL CHARACTERISTIC; FLASH DEVICES; FOWLER-NORDHEIM; HIGH-K; IMPLANTATION ENERGIES; IMPLANTED NITROGEN; PLASMA IMMERSION ION IMPLANTATION; PROGRAMMING SPEED; RETENTION CHARACTERISTICS; TUNNELING OXIDES;

CHARGE TRAPPING; ION BOMBARDMENT; ION IMPLANTATION; PLASMA APPLICATIONS; PLASMAS; SILICON NITRIDE;

FLASH MEMORY;

EID: 67349185145 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2009.03.071 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.