AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1087-1090

  Taoka, Noriyuki ^a   Yokoyama, Masafumi ^a   Kim, Sang Hyeon ^a   Suzuki, Rena ^a   Hoshii, Takuya ^a   Iida, Ryo ^a   Lee, Sunghoon ^a   Urabe, Yuji ^b   Miyata, Noriyuki ^b   Yasuda, Tetsuji ^b   Yamada, Hisashi ^c   Fukuhara, Noboru ^c   Hata, Masahiko ^c   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

Conductance method; InP; Interface trap; Slow trap

Indexed keywords

AC RESPONSE; AC SIGNALS; BIAS CONDITIONS; C-V CURVE; CONDUCTANCE METHOD; CONDUCTANCE PEAKS; HIGH FREQUENCY; INP; INTERFACE TRAP; INTERFACE TRAPS; MAJORITY CARRIERS; METAL-INSULATOR-SEMICONDUCTORS; POTENTIAL FLUCTUATIONS; SLOW TRAP;

ALUMINUM; METAL INSULATOR BOUNDARIES; MIS DEVICES; SURFACE POTENTIAL; SURFACE PROPERTIES; VANADIUM;

CURVE FITTING;

EID: 79958034616     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.036     Document Type: Conference Paper

References (13)

1. S.H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi Tech. Dig. Int. Electron Devices Meet. 596 2010 596
2. H.C. Lin, W.E. Wang, G. Brammertz, M. Meuris, and M. Heyns Microelectron. Eng. 86 2009 1554
3. M.L. Huang, Y.C. Chang, C.H. Chang, Y.J. Lee, P. Chang, J. Kwo, T.B. Wu, and M. Hong Appl. Phys. Lett. 87 2005 25104
4. R.E. Herbert, Y. Hwang, and S. Stemmer J. Appl. Phys. 108 2010 124101
5. T. Haimoto, T. Hoshii, S. Nakagawa, M. Takenaka, and S. Takagi Appl. Phys. Lett. 96 2010 012107
6. E.H. Nicollian, and A. Goetzberger Bell Syst. Tech. J. 46 1967 1055
7. H.C. Lin, G. Brammertz, K. Martens, G. de Valicourt, L. Negre, W.-E. Wang, W. Tsai, M. Meuris, and M. Heyns Appl. Phys. Lett. 94 2009 153508
8. J.R. Brews J. Appl. Phys. 43 1972 2306
9. O. Wada, and H. Hasegawa InP-based Material and Devices 1999 Wiley New York (Chapter 4)
10. M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M.K. Hudait, J.M. Fastenau, J. Kavalieros, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, W. Rachmady, U. Shah, and Robert Chau Tech. Dig. Int. Electron Devices Meet. 319 2009 319
11. E.H. Nicollian, and J.R. Brews MOS Physics and Technology 2003 Wiley New York p. 223
12. T.E. Kazior, J. Lagowski, and H.C. Gatos J. Appl. Phys. 54 1983 2533
13. E.J. Kim, L. Wang, P.M. Asbeck, K.C. Saraswat, and P.C. McIntyre Appl. Phys. Lett. 96 2010 012906