The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

  Oosthoek, J L M ^a   Krebs, D ^b   Salinga, M ^c   Gravesteijn, D J ^d   Hurkx, G A M ^d   Kooi, B J ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b IBM RESEARCH ZURICH   (Switzerland)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE; ANNEALING EXPERIMENTS; BAND TRANSPORT; DRIFT PROCESS; PHASE CHANGE; PHASE-CHANGE RANDOM ACCESS MEMORY; RANDOM ACCESS MEMORIES; TEMPERATURE DEPENDENT; TEMPORAL DRIFTS;

ACTIVATION ENERGY;

THERMAL LOGGING;

EID: 84868360998     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759239     Document Type: Article

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