The influence of a temperature dependent bandgap on the energy scale of modulated photocurrent experiments

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Luckas, Jennifer ^a   Kremers, Stephan ^a   Krebs, Daniel ^a   Salinga, Martin ^a   Wuttig, Matthias ^a   Longeaud, Christophe ^b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AMORPHOUS PHASE; CHALCOGENIDE GLASS; COMMON FEATURES; CORRECTION TERMS; DEFECT DISTRIBUTION; DEFECT STATE; DISORDERED MATERIALS; ELECTRONIC TRANSPORT PROPERTIES; ENERGY SCALE; ENERGY SCALING; HIGH DENSITY; LONG RANGE ORDERS; MODULATED PHOTOCURRENT; MODULATION FREQUENCIES; RELATIVE DENSITY; STRUCTURAL DEFECT; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THRESHOLD SWITCHING;

AMORPHOUS ALLOYS; AMORPHOUS MATERIALS; AMORPHOUS SEMICONDUCTORS; AMORPHOUS SILICON; DEFECT DENSITY; DEFECTS; EXPERIMENTS; GERMANIUM; MODEL PREDICTIVE CONTROL; PHASE CHANGE MEMORY; TRANSPORT PROPERTIES;

ENERGY GAP;

EID: 79960481591     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3605517     Document Type: Article

References (38)

1. M. Wuttig and N. Yamada, Nat. Mat. 6, 824 (2007). 10.1038/nmat2009 (Pubitemid 350050578)
2. W. Welnic, A. Pamungkas, R. Detemple, C. Steimer, S. Blgel, and M. Wuttig, Nat. Mat. 5, 56 (2006). 10.1038/nmat1539 (Pubitemid 43049389)
3. G. Bruns, P. Merkelbach, C. Schlockermann, M. Salinga, M. Wuttig, T. D. Happ, J. B. Philipp, and M. Kund, Appl. Phys. Lett. 95, 043108 (2009). 10.1063/1.3191670
4. Y. C. Chen, International Electron Devices Meeting IEDM'06 (2006), pp. 1-4.
5. S. Raoux and R. M. Shelby, Microelectronic Engineering 85, 2330 (2008). 10.1016/j.mee.2008.08.004
6. S. K. Lai, IBM J. Res. and Dev. 52, 529 (2008). 10.1147/rd.524.0529
7. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizer, and R. Bez, IEEE Transactions On Electron Devices, IEEE-Inst Electrical Electronics Engineers Inc. 51, 452 (2004).
8. D. Krebs, S. Raoux, C. T. Rettner, G. W. Burr, M. Salinga, and M. Wuttig, Appl. Phys. Lett. 95, 082101 (2009). 10.1063/1.3210792
9. D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980). 10.1063/1.328036 (Pubitemid 11441240)
10. A. Redaelli, A. Pirovano, A. Benvenuti, and A. L. Lacaita, J. Appl. Phys. 103, 111101 (2008). 10.1063/1.2931951
11. D. Ielmini and Y. Zhang, J. Appl. Phys. 102, 054517 (2007). 10.1063/1.2773688 (Pubitemid 47409867)
12. D. Ielmini, Phys. Rev. B 78, 035308 (2008). 10.1103/PhysRevB.78.035308
13. I. V. Karpov, J. Appl. Phys. 102, 124503 (2007). 10.1063/1.2825650
14. D. Ielimini, S. Lavizzari, D. Sharma, and A. L. Lacaita, International Electron Devices Meeting IEDM'07 (2007), pp. 939-942.
15. M. Boniardi, A. Redaelli, A. Pirovano, I. Tortorelli, D. Ielmini, and F. Pellizzer, J. Appl. Phys. 105, 084506 (2009). 10.1063/1.3109063
16. S. Lavizzarri, D. Ielmini, D. Sharma, and A. L. Lacaita, IEEE Transaction on Electron Devices'09 56, 1078 (2009). 10.1109/TED.2009.2016398
17. A. E. Owen and J. M. Robertson, IEEE Transactions On Electron Devices 20, 105 (1973). 10.1109/T-ED.1973.17617
18. C. Longeaud, D. Roy, and O. Saadane, Phys. Rev. B 65, 085206 (2002). 10.1103/PhysRevB.65.085206
19. J. Luckas, D. Krebs, M. Salinga, M. Wuttig, and C. Longeaud, Physica Status 7, 852 (2010).
20. D. Adler, Amorphous Semiconductors (The Butterworth Group, 1971).
21. S. Shportko, S. Kremers, M. Woda, D. Lencer, J. Robertson, and M. Wuttig, Nat. Mat. 7, 653 (2008). 10.1038/nmat2226
22. Y. P. Varshni, Physica 34, 149 (1967). 10.1016/0031-8914(67)90062-6
23. W. Theiss, http://wtheiss.com, softwares for research in optics, optical spectroscopy and material science.
24. G. E. Jellison, Thin Solid Films 313-314, 33 (1998). 10.1016/S0040- 6090(97)00765-7
25. M. Fox, Optical Properties of Solids (Oxford University Press, 2004).
26. J. Tauc, Optical Properties of Solids (North-Holland, Amsterdam, 1970).
27. J. Stuke, J. Non-cryst. Solids 4, 1 (1970). 10.1016/0022-3093(70)90015-3
28. N. Do, L. Klees, P. T. Leung, F. Tong, W. P. Leung, and A. C. Tam, Appl. Phys. Lett. 60, 2186 (1992). 10.1063/1.107074
29. E. C. Freeman and W. Paul, Phys. Rev. B 20, 716 (1979). 10.1103/PhysRevB.20.716
30. H. Tich, L. Tich, P. Nagels, E. Sleeckx, and R. Callaerts, J. Phys. Chem. Solids 61, 545 (2000). 10.1016/S0022-3697(99)00249-8 (Pubitemid 32131945)
31. R. Brggemann, C. Main, J. Berkin, and S. Reynolds, Philos. Mag. B 62, 29 (1990).
32. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952). 10.1103/PhysRev.87.835
33. R. A. Street, Hydrogenated Amorphous Silicon (Cambridge Solid State Series, 1991).
34. H. Oheda, J. Appl. Phys. 52, 6693 (1981). 10.1063/1.328619 (Pubitemid 12448089)
35. C. Longeaud and J. P. Kleider, Phys. Rev. B 45, 11672 (1992). 10.1103/PhysRevB.45.11672
36. C. Longeaud and J. P. Kleider, Phys. Rev. B 48, 8715 (1993). 10.1103/PhysRevB.48.8715
37. C. Longeaud, J. A. Schmidt, and R. R. Koropecki, Phys. Rev. B 73, 235317 (2006). 10.1103/PhysRevB.73.235317 (Pubitemid 43882704)
38. C. Longeaud and S. Tobbeche, J. Phys.: Condens. Matter 21, 045508 (2009). 10.1088/0953-8984/21/4/045508