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Volumn 358, Issue 17, 2012, Pages 2412-2415

Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials

(9) Krebs, Daniel a,b Schmidt, Rüdiger M b Klomfabeta, Josef c Luckas, Jennifer b Bruns, Gunnar b Schlockermann, Carl b Salinga, Martin b Carius, Reinhard c Wuttig, Matthias b

a IBM RESEARCH ZURICH (Switzerland)

b RWTH AACHEN UNIVERSITY (Germany)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Amorphous; Density of states; Phase change materials; Resistance drift; Threshold switching

Indexed keywords

AMORPHOUS PHASE-CHANGE MATERIAL; AMORPHOUS STATE; DENSITY OF STATE; MEMORY TECHNOLOGY; ON-RESISTANCE; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; RESISTANCE INCREASE; THRESHOLD SWITCHING; TIME AND TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; AMORPHOUS MATERIALS; OPTICAL BAND GAPS;

PHASE CHANGE MATERIALS;

EID: 84865420155 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2011.12.112 Document Type: Conference Paper

Times cited : (35)

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