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Applied Physics Letters

Volumn 100, Issue 1, 2012, Pages

Band gap widening with time induced by structural relaxation in amorphous Ge 2Sb 2Te 5 films

(4) Fantini, P a Brazzelli, S a Cazzini, E a Mani, A b

a Micron Process RandD (Italy)

b KLA TENCOR CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS NETWORKS; AMORPHOUS PHASE; ATOMIC REARRANGEMENTS; BAND GAP WIDENING; DEVICE RESISTANCE; ELLIPSOMETRIC MEASUREMENTS; FUNCTION OF TIME; HIGH RESISTIVE STATE; LOCALIZED STATE; OPTICAL BANDS; RESISTANCE INCREASE;

ANTIMONY; ELLIPSOMETRY; ENERGY GAP; GERMANIUM; OPTICAL CORRELATION; PHASE CHANGE MEMORY; SOLIDS;

AMORPHOUS FILMS;

EID: 84855543475 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3674311 Document Type: Article

Times cited : (70)

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