Mechanical properties of silicon nanowires

Wiley Interdisciplinary Reviews: Computational Molecular Science

Volumn 2, Issue 6, 2012, Pages 817-828

  Furmanchuk, Al'ona ^a   Isayev, Olexandr ^b   Dinadayalane, Tandabany C ^a   Leszczynska, Danuta ^a,c   Leszczynski, Jerzy ^a  

^a JACKSON STATE UNIVERSITY   (United States)

^b CASE WESTERN RESERVE UNIVERSITY   (United States)

^c Jackson State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84867344240     PISSN: 17590876     EISSN: 17590884     Source Type: Journal    
DOI: 10.1002/wcms.1108     Document Type: Article

References (54)

1. Wagner RS, Ellis WC. Vapor-liquid-solid mechanism of single crystal growth. Appl Phys Lett 1964, 4:89-90.
2. Patolsky F, Zheng G, Lieber CM. Nanowire-based biosensors. Anal Chem 2006, 78:4260-4269.
3. Kao LT-H, Shankar L, Kang TG, Zhang G, Tay GKI, Rafei SRM, Lee CWH. Multiplexed detection and differentiation of the DNA strains for influenza A (H1N1 2009) using a silicon-based microfluidic system. Biosens Bioelectron 2011, 26:2006-2011.
4. Pal S, Alocilja EC. Electrically active magnetic nanoparticles as novel concentrator and electrochemical redox transducer in Bacillus anthracis DNA detection. Biosens Bioelectron 2010, 26:1624-1630.
5. Zheng G, Patolsky F, Cui Y, Wang WU, Lieber CM. Multiplexed electrical detection of cancer markers with nanowire sensor arrays. Nat Biotechnol 2005, 23:1294-1301.
6. Zhang G-J, Huang MJ, Ang JJ, Liu ET, Desai KV. Self-assembled monolayer-assisted silicon nanowire biosensor for detection of protein-DNA interactions in nuclear extracts from breast cancer cell. Biosens Bioelectron 2011, 26:3233-3239.
7. Wan J, Deng S-R, Yang R, Shu Z, Lu B-R, Xie S-Q, Chen Y, Huq E, Liu R, Qu X-P. Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer. Microelectron Eng 2009, 86:1238-1242.
8. Clément N, Nishiguchi K, Dufreche JF, Guerin D, Fujiwara A, Vuillaume D. A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity. Appl Phys Lett 2011, 98:014104.
9. Knopfmacher O, Tarasov A, Wangyang Fu, Wipf M, Niesen B, Calame M, Schönenberger C. Nernst limit in dual-gated Si-nanowire FET sensors. Nano Lett 2010, 10:2268-2274.
10. Peng K-Q, Lee S-T. Silicon nanowires for photovoltaic solar energy conversion. Adv Mater 2011, 23:198-215.
11. Chu M, Sun Y, Aghoram U, Thompson SE. Strain: a solution for higher carrier mobility in nanoscale MOSFETs. Ann Rev Mater Res 2009, 39:203-229.
12. Jin Q, Li T, Zhou P, Wang Y. Mechanical researches on Young's modulus of SCS nanostructures. J Nanomater 2009, 2009:319842.
13. Naumova OV, Vohmina EV, Gavrilova TA, Dudchenko NV, Nikolaev DV, Spesivtsev EV, Popov VP. Properties of silicon nanolayers on insulator. Mater Sci Eng B 2006, 135:238-241.
14. Hsin CL, Mai W, Gu Y, Gao Y, Huang CT, Liu Y, Chen LJ, Wang ZL. Elastic properties and buckling of silicon nanowires. Adv Mater 2008, 20:3919-3923.
15. Gordon MJ, Baron T, Dhalluin F, Gentile P, Ferret P. Size effects in mechanical deformation and fracture of cantilevered silicon nanowires. Nano Lett 2009, 9:525-529.
16. Zheng K, Han X, Wang L, Zhang Y, Yue Y, Qin Y, Zhang X, Zhang Z. Atomic mechanisms governing the elastic limit and the incipient plasticity of bending Si nanowires. Nano Lett 2009, 9:2471-2476.
17. Zhu Y, Xu F, Qin G, Fung WY, Lu W. Mechanical properties of vapor-liquid-solid synthesized silicon nanowires. Nano Lett 2009, 9:3934-3939.
18. Kizuka T, Takatani Y, Asaka K, Yoshizaki R. Measurements of the atomistic mechanics of single crystalline silicon wires of nanometer width. Phys Rev B 2005, 72:035333.
19. Lee B, Rudd RE. First-principles calculation of mechanical properties of Si <001> nanowires and comparison to nanomechanical theory. Phys Rev B 2007, 75:195328.
20. Ma L, Wang J, Zhao J, Wang G. Anisotropy in stability and Young's modulus of hydrogenated silicon nanowires Chem Phys Lett 2008, 452:183-187.
21. Sadeghian H, Yang C-K, Goosen JFL, Van Der Drift E, Bossche A, French PJ, Van Keulen F. Characterizing size-dependent effective elastic modulus of silicon nanocantilevers using electrostatic pull-in instability. Appl Phys Lett 2009, 94:221903.
22. Park SH, Kim JS, Park JH, Lee JS, Choi YK, Kwon OM. Molecular dynamics study on size-dependent elastic properties of silicon nanocantilevers. Thin Solid Films 2005, 492:285-289.
23. Sadeghian H, Yang C-K, Gavan KB, Goosen JFL, van der Drift EWJM, van der Zant HSJ, Bossche A, French PJ, van Keulen R. Some considerations of effects-induced errors in resonant cantilevers with the laser deflection method. J Micromech Microeng 2010, 20:105027.
24. Sadeghian H, Yang C-K, Goosen JFL, Bossche A, Staufer U, French PJ, van Keulen R. Effects of size and defects on the elasticity of silicon nanocantilevers. J Micromech Microeng 2010, 20:064012.
25. Steighner MS, Snedeker LP, Boyce BL, Gall K, Miller DC, Muhlstein CL. Dependence on diameter and growth direction of apparent strain to failure of Si nanowires. J Appl Phys 2011, 109:033503.
26. Röhlig CC, Niebelschütz M, Brueckner K, Tonisch K, Ambacher O, Cimalla V. Elastic properties of nanowires. Phys Status Solidi B 2010, 247:2557-2570.
27. Kim YJ, Son K, Choi IC, Choi IS, Park WI, Jang JI. Exploring nanomechanical behavior of silicon nanowires: AFM bending versus nanoindentation. Adv Funct Mater 2011, 21:279-286.
28. Sadeghian H, Rezazadeh G, Osterberg PM. Application of the generalized differential quadrature method to the study of pull-in phenomena of MEMS switches. J Microelectromech Syst 2007, 16:1334-1340.
29. Zheng X, Zhu L. Theoretical analysis of electric field effect on Young's modulus of nanowires. Appl Phys Lett 2006, 89:153110.
30. Zhu L, Zheng X. Modification of the elastic properties of nanostructures with surface charges in applied electric fields. Europ J Mechan A 2010, 29:337-347.
31. Chang N-K, Lin Y-S, Chen C-Y, Chang S-H. Size effect of indenter on determining modulus of nanowires using nanoindentation technique. Thin Solid Films 2009, 517:3695-3697.
32. Shu SQ, Yang Y, Fu T, Wen CS, Lu J. Can Young's modulus and hardness of wire structural materials be directly measured using nanoindentation? J Mater Res 2009, 24:1054-1058.
33. Oliver WC, Pharr GM. Improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J Mater Res 1992, 7:1564-1580.
34. He J, Lilley CM. Surface effect on the elastic behavior of static bending nanowires. Nano Lett 2008, 8:1798-1802.
35. Espinosa HD, Zhu Y, Moldovan N. Design and operation of a MEMS-based material testing system for nanomechanical characterization. J Microelectromech Syst 2007, 16:1219-1231.
36. Zhu Y, Corigliano A, Espinosa HD. A thermal actuator for nanoscale in situ microscopy testing: design and characterization. J Micromech Microeng 2006, 16:242-253.
37. Kiuchi M, Matsui S, Isono Y. Mechanical characteristics of FIB deposited carbon nanowires using an electrostatic actuated nano tensile testing device. J Microelectromech Syst 2007, 16:191-201.
38. Belytschko T, Gracie R, Ventura G. A review of extended/generalized finite element methods for material modeling Model Simul Mater Sci Eng 2009, 17:043001.
39. Govindjee S, Sackman JL. On the use of continuum mechanics to estimate the properties of nanotubes. Solid State Commun 1999, 110:227-230.
40. Dumitricǎ T, James RD. Objective molecular dynamics. J Mech Phys Solids 2007, 55:2206-2236.
41. Cai W, Fong W, Elsen E, Weinberger CR. Torsion and bending periodic boundary conditions for modeling the intrinsic strength of nanowires. J Mech Phys Solids 2008, 56:3242-3258.
42. Becke AD. Density-functional exchange-energy approximation with correct asymptotic behavior. Phys Rev A 1988, 38:3098-3100.
43. Balamane H, Halicioglu T, Tiller WA. Comparative study of silicon empirical interatomic potentials. Phys Rev B 1992, 46:2250-2279.
44. Godet J, Pizzagalli L, Brochard S, Beauchamp P Computer study of microtwins forming from surface steps of silicon. Comput Mater Sci 2004, 30:16-20.
45. Guénolé J, Godet J, Brochard S. Deformation of silicon nanowires studied by molecular dynamics simulations. Model Simul Mater Sci Eng 2011, 19:074003.
46. Schelling PK. Phase behavior and kinetics of a new bond-order potential for silicon. Comput Mater Sci 2008, 44:274-279.
47. Kang K, Cai W. Brittle and ductile fracture of semiconductor nanowires-molecular dynamics simulations. Phil Mag 2007, 87:2169-2189.
48. Kang K, Cai W. Size and temperature effects on the fracture mechanisms of silicon nanowires: molecular dynamics simulations. Int J Plasticity 2010, 26:1387-1401.
49. Sadeghian H, Goosen JFL, Bossche A, Thijsse B, Keulen Rv. On the size-dependent elasticity of silicon nanocantilevers: impact of defects. J Phys D 2011, 44:072001.
50. Jing Y, Meng Q. Molecular dynamics simulations of the mechanical properties of crystalline/amorphous silicon core/shell nanowires. Physica B 2010, 405:2413-2417.
51. Chan WK, Zhang T-Y. Mechanics analysis and atomistic simulations of nanobridge tests. J Appl Phys 2010, 107:023526.
52. Liu WK, Qian D, Gonella S, Li S, Chen W, Chirputkar S. Multiscale methods for mechanical science of complex materials: bridging from quantum to stochastic multiresolution continuum. Int J Numer Methods Eng 2010, 83:1039-1080.
53. Rurali R. Colloquium: structural, electronic, and transport properties of silicon nanowires. Rev Mod Phys 2010, 82:427-449.
54. Furmanchuk A, Isayev O, Dinadayalane TC, Leszczynski J. Car-Parrinello molecular dynamics simulations of tensile tests in Si <001> nanowires. J Phys Chem C 2011, 115:12283-12292.