Effects of size and defects on the elasticity of silicon nanocantilevers

Journal of Micromechanics and Microengineering

Volumn 20, Issue 6, 2010, Pages

  Sadeghian, Hamed ^a,b   Yang, Chung Kai ^b   Goosen, Johannes F L ^a   Bossche, Andre ^b   Staufer, Urs ^a   French, Paddy J ^b   Van Keulen, Fred ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL INVESTIGATION; DEVICE LAYERS; ELASTIC BEHAVIOR; EXPERIMENTAL MEASUREMENTS; INDUCED DEFECTS; NANO-DIMENSIONS; NATIVE OXIDE LAYER; PULL-IN INSTABILITY; SCALE DOWN; SILICON CANTILEVER; SILICON ON INSULATOR WAFERS; SIZE DEPENDENCE; SURFACE CONTAMINATIONS; SURFACE EFFECT; SURFACE ELASTICITIES; SURFACE STRESS; THEORETICAL INVESTIGATIONS; THEORETICAL MODELS; ULTRATHIN SILICON; YOUNG'S MODULUS;

ELASTIC MODULI; ELASTICITY; NANOCANTILEVERS; NANOSTRUCTURED MATERIALS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 78650896169     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/6/064012     Document Type: Article

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