A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Clement N ^a   Nishiguchi, K ^b   Dufreche, J F ^c   Guerin, D ^a   Fujiwara, A ^b   Vuillaume, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c CEA Marcoule   (France)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; CHARGE NOISE; DIELECTRIC POLARIZATION; ELECTRICAL DETECTION; ELEMENTARY CHARGE; LOW-FREQUENCY NOISE; MINIMAL EFFECTS; NANO SCALE; NOISE LEVELS; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES;

ELECTRIC WIRE; IONIC STRENGTH; MESFET DEVICES; NANOWIRES; SPECTRAL DENSITY;

FIELD EFFECT TRANSISTORS;

EID: 78651343244     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3535958     Document Type: Article

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