Characterizing size-dependent effective elastic modulus of silicon nanocantilevers using electrostatic pull-in instability

Applied Physics Letters

Volumn 94, Issue 22, 2009, Pages

  Sadeghian, H ^a,b   Yang, C K ^b   Goosen, J F L ^a   Van Der Drift, E ^c   Bossche, A ^b   French, P J ^b   Van Keulen, F ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE ELASTIC MODULUS; ELECTROMECHANICAL COUPLED; MEASUREMENT RESULTS; NANO ELECTROMECHANICAL SYSTEMS; PULL-IN INSTABILITY; PULL-IN VOLTAGE; SIZE-DEPENDENCE; YOUNG'S MODULUS;

ELASTIC MODULI; ELECTRIC WIRE; ELECTROSTATICS; NANOSTRUCTURED MATERIALS; NANOWIRES;

NANOCANTILEVERS;

EID: 66749130172     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148774     Document Type: Article

References (20)

1. H. G. Craighead, Science 0036-8075 290, 1532 (2000). 10.1126/science.290. 5496.1532
2. T. Kizuka, Y. Takatani, K. Asaka, and R. Yoshizaki, Phys. Rev. B 0163-1829 72, 035333 (2005). 10.1103/PhysRevB.72.035333
3. M. J. Gordon, T. Baron, F. Dhalluin, P. Gentile, and P. Ferret, Nano Lett. 1530-6984 9, 525 (2009). 10.1021/nl802556d
4. R. Agrawal, B. Peng, E. E. Gdoutos, and H. D. Espinosa, Nano Lett. 1530-6984 8, 3668 (2008). 10.1021/nl801724b
5. B. Lee and R. E. Rudd, Phys. Rev. B 0163-1829 75, 195328 (2007). 10.1103/PhysRevB.75.195328
6. M. T. McDowell, A. M. Leach, and K. Gall, Nano Lett. 1530-6984 8, 3613 (2008). 10.1021/nl801526c
7. S. Cuenot, C. Fŕtigny, S. Demoustier-Champagne, and B. Nysten, Phys. Rev. B 0163-1829 69, 165410 (2004). 10.1103/PhysRevB.69.165410
8. R. E. Miller and V. B. Shenoy, Nanotechnology 0957-4484 11, 139 (2000). 10.1088/0957-4484/11/3/301
9. M. T. McDowell, A. M. Leach, and K. Gall, Modell. Simul. Mater. Sci. Eng. 0965-0393 16, 045003 (2008). 10.1088/0965-0393/16/4/045003
10. X. Li, T. Ono, Y. Wang, and M. Esashi, Appl. Phys. Lett. 0003-6951 83, 3081 (2003). 10.1063/1.1618369
11. Y. Yang, C. Callegari, X. Feng, K. Ekinci, and M. Roukes, Nano Lett. 1530-6984 6, 583 (2006). 10.1021/nl052134m
12. H. J. Mamin and D. Rugar, Appl. Phys. Lett. 0003-6951 79, 3358 (2001). 10.1063/1.1418256
13. C. Stampfer, A. Jungen, R. Linderman, D. Obergfell, S. Roth, and C. Hierold, Nano Lett. 1530-6984 6, 1449 (2006). 10.1021/nl0606527
14. A. W. McFarland, M. A. Poggi, L. A. Bottomley, and J. S. Colton, J. Micromech. Microeng. 0960-1317 15, 785 (2005). 10.1088/0960-1317/15/4/016
15. H. G. Craighead, Nat. Nanotechnol. 1748-3387 2, 18 (2007). 10.1038/nnano.2006.181
16. P. Osterberg and S. Senturia, J. Microelectromech. Syst. 1057-7157 6, 107 (1997). 10.1109/84.585788
17. H. Sadeghian, G. Rezazadeh, and P. M. Osterberg, J. Microelectromech. Syst. 1057-7157 16, 1334 (2007). 10.1109/JMEMS.2007.909237
18. See EPAPS supplementary material at http://dx.doi.org/10.1063/1.3148774 E-APPLAB-94-089922 for descriptions of fabrication, alternative detection method, and full experimental measurements.
19. ΔL is the length error measured by SEM. Δt and Δg are the errors of the ellipsometry measurements, and ΔV is the accuracy of the voltage source.
20. H. S. Park, W. Cai, H. D. Espinosa, and H. Huang, MRS Bull. 0883-7694 34, 178 (2009).