Properties of silicon nanolayers on insulator

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 238-241

  Naumova, O V ^a   Vohmina, E V ^a   Gavrilova, T A ^a   Dudchenko, N V ^a   Nikolaev, D V ^a   Spesivtsev, E V ^a   Popov, V P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Defect formation; Semiconductors insulator semiconductor structures; Silicon; Thin films

Indexed keywords

FILM GROWTH; NANOSTRUCTURED MATERIALS; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THIN FILMS;

HYDROGEN INDUCED TRANSFER; SEMICONDUCTORS-INSULATOR-SEMICONDUCTOR STRUCTURES; SILICON LAYER; THERMAL OXIDATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33750692743     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.013     Document Type: Article

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