Measurement and analysis of a high-speed TSV channel

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 2, Issue 10, 2012, Pages 1672-1685

  Kim, Heegon ^a   Cho, Jonghyun ^a   Kim, Myunghoi ^a   Kim, Kiyeong ^a   Lee, Junho ^b   Lee, Hyungdong ^b   Park, Kunwoo ^b   Choi, Kwangseong ^c   Bae, Hyun Cheol ^c   Kim, Joungho ^a   Kim, Jiseong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Channel loss; high speed through silicon via (TSV) channel; measurement; reflection

Indexed keywords

CHANNEL LOSS; CHARACTERISTIC IMPEDANCE; DATA-RATE; DESIGN GUIDANCE; DIGITAL SIGNALS; FREQUENCY DOMAINS; FREQUENCY-DEPENDENT; HIGH BANDWIDTH; HIGH-SPEED; MEASUREMENT AND ANALYSIS; NON-IDEALITIES; SIGNAL INTEGRITY; SINGLE-ENDED; TEST VEHICLE; TIME DOMAIN; WIDE BANDWIDTH;

FREQUENCY DOMAIN ANALYSIS; MEASUREMENTS; MULTICHIP MODULES; REFLECTION;

TIME DOMAIN ANALYSIS;

EID: 84867220801     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2012.2207900     Document Type: Article

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