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Volumn , Issue , 2010, Pages 1100-1105

Electrical characterization of 3D Through-Silicon-Vias

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVE WAFER BONDING; CHARACTERIZATION METHODS; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; EYE DIAGRAMS; FREQUENCY-DEPENDENT CAPACITANCE; INDUCTANCE EXTRACTION; LCR METERS; LOW FREQUENCY; MEASUREMENT TECHNIQUES; REFLECTION COEFFICIENTS; SIMULATION DATA; SYSTEM APPLICATIONS; TEST STRUCTURE; THROUGH SILICON VIAS; TRANSMISSION LINE;

EID: 77955226786     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490839     Document Type: Conference Paper
Times cited : (17)

References (9)
  • 1
    • 64549139638 scopus 로고    scopus 로고
    • A 300-mm Wafer-Level Three-Dimensional Integration Scheme Using Tungsten Through-Silicon Via and Hybrid Cu-Adhesive Bonding
    • San Fansisco, CA, Dec.
    • Liu, F. et al, "A 300-mm Wafer-Level Three-Dimensional Integration Scheme Using Tungsten Through-Silicon Via and Hybrid Cu-Adhesive Bonding" Proc. International Electron Devices Meeting, San Fansisco, CA, Dec. 2008.
    • (2008) Proc. International Electron Devices Meeting
    • Liu, F.1
  • 2
    • 71049131621 scopus 로고    scopus 로고
    • Reliability of a 300-mm-compatible 3di technology based on hybrid cu-adhesive wafer bonding
    • Kyoto, Japan, Jun.
    • Yu, R. R. et al, "Reliability of a 300-mm-Compatible 3DI Technology Based on Hybrid Cu-Adhesive Wafer Bonding" Symposium on VLSI Technology Digest of Technical Papers, Kyoto, Japan, Jun. 2009, pp. 170-171.
    • (2009) Symposium on VLSI Technology Digest of Technical Papers , pp. 170-171
    • Yu, R.R.1
  • 4
    • 46049098824 scopus 로고    scopus 로고
    • 3D Integration by Cu-Cu thermo- compression bonding of extremely thinned bulk-si die containing 10 um pitch through-si vias
    • San Fansisco, CA, Dec.
    • Swinnen, B. W. et al, "3D Integration by Cu-Cu Thermo- Compression Bonding of Extremely Thinned Bulk-Si Die Containing 10 um Pitch Through-Si Vias" Proc. International Electron Devices Meeting, San Fansisco, CA, Dec. 2006.
    • (2006) Proc. International Electron Devices Meeting
    • Swinnen, B.W.1
  • 7
    • 70350000414 scopus 로고    scopus 로고
    • High frequency characterization and modeling of high density TSV in 3d integrated circuits
    • Strasbourg, France, May.
    • C. Bermond, et al, "High Frequency Characterization and Modeling of High Density TSV in 3D Integrated Circuits" IEEE Workshop on Signal Propagation on Interconnects, Strasbourg, France, May. 2009.
    • (2009) IEEE Workshop on Signal Propagation on Interconnects
    • Bermond, C.1
  • 8
    • 42549142869 scopus 로고    scopus 로고
    • High frequency electrical model of through wafer via for 3-D stacked chip packaging
    • Dresden, Germany, Sept.
    • Ryu, C. et al, "High Frequency Electrical Model of Through Wafer Via for 3-D Stacked Chip Packaging" Proc. 1st Electronics System integration Technology Conference, Dresden, Germany, Sept. 2006, pp. 215-220.
    • (2006) Proc. 1st Electronics System Integration Technology Conference , pp. 215-220
    • Ryu, C.1
  • 9
    • 0026908091 scopus 로고
    • S-parameter-based IC interconnect transmission line characterization
    • Hybrids, and Manufacturing Technology, Vol
    • Eisenstadt, W. R., et al, "S-parameter-based IC interconnect transmission line characterization" IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol 15, No 4, pp 483-490, 1992.
    • (1992) IEEE Transactions on Components , vol.15 , Issue.4 , pp. 483-490
    • Eisenstadt, W.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.