Modeling and analysis of through-silicon via (TSV) noise coupling and suppression using a guard ring

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 1, Issue 2, 2011, Pages 220-233

  Cho, Jonghyun ^a   Song, Eakhwan ^a   Yoon, Kihyun ^a   Pak, Jun So ^a   Kim, Joohee ^a   Lee, Woojin ^a   Song, Taigon ^b   Kim, Kiyeong ^a   Lee, Junho ^c   Lee, Hyungdong ^c   Park, Kunwoo ^c   Yang, Seungtaek ^c   Suh, Minsuk ^c   Byun, Kwangyoo ^c   Kim, Joungho ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

Guard ring; measurement; noise coupling model; noise coupling suppression; noise isolation; noise transfer function; shielding structure; substrate noise; three dimensional integrated circuit (3D IC); through silicon via (TSV)

Indexed keywords

GUARD-RINGS; NOISE COUPLING; NOISE ISOLATION; NOISE TRANSFER FUNCTION; SUBSTRATE NOISE; THREE DIMENSIONAL INTEGRATED CIRCUITS; THROUGH-SILICON VIA;

ACTIVE NETWORKS; INTEGRATED CIRCUITS; MATRIX ALGEBRA; MEASUREMENTS; SHIELDING; THREE DIMENSIONAL COMPUTER GRAPHICS; TRANSFER FUNCTIONS;

THREE DIMENSIONAL;

EID: 80155176733     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2010.2101892     Document Type: Article

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