Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2012, Pages 319-325

  Wang, Yiwei ^a   Chae, Seung Hyun ^b   Dunne, Rajiv ^b   Takahashi, Yoshimi ^b   Mawatari, Kazuaki ^b   Steinmann, Philipp ^b   Bonifield, Tom ^b   Jiang, Tengfei ^a   Im, Jay ^a   Ho, Paul S ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D INTERCONNECT; CURRENT-STRESSING; ELECTROMIGRATION RELIABILITY; ELEVATED TEMPERATURE; INTERMETALLIC COMPOUND GROWTHS; INTERMETALLIC FORMATION; THERMAL-ANNEALING;

ELECTROMIGRATION; INTERMETALLICS; METALLIZING; SCANNING ELECTRON MICROSCOPY; TIN;

RELIABILITY;

EID: 84866854907     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2012.6248849     Document Type: Conference Paper

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