Improved switching variability and stability by activating a single conductive filament

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 646-648

  Park, Jubong ^a   Jung, Seungjae ^a   Lee, Wootae ^a   Kim, Seonghyun ^a   Shin, Jungho ^a   Lee, Daeseok ^a   Woo, Jiyong ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Resistive memory (ReRAM); RRAM; Single filament; Stability; Uniformity; Variability

Indexed keywords

RESISTIVE MEMORIES; RRAM; SINGLE FILAMENTS; UNIFORMITY; VARIABILITY;

ATOMIC FORCE MICROSCOPY; CONVERGENCE OF NUMERICAL METHODS; ELECTRIC PROPERTIES;

RANDOM ACCESS STORAGE;

EID: 84860360880     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2188373     Document Type: Article

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