Atomic-layer-deposited HfLaO-based resistive switching memories with superior performance

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1296-1298

  Chen, Lin ^a   Xu, Yan ^a   Sun, Qing Qing ^a   Zhou, Peng ^a   Wang, Peng Fei ^a   Ding, Shi Jin ^a   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Atomic layer deposition; conductive filament; HfLaO; resistive switching

Indexed keywords

ATOMIC LAYER DEPOSITED; CONDUCTIVE FILAMENTS; FAST OPERATION; FILAMENTARY CONDUCTION; FUTURE MEMORY; HFLAO; MEMORY APPLICATIONS; MEMORY SWITCHING; NON-VOLATILE MEMORY APPLICATION; OHMIC BEHAVIOR; OXYGEN IONS; READOUT CHARACTERISTICS; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SPACE-CHARGE-LIMITED;

ATOMIC LAYER DEPOSITION; DIELECTRIC FILMS; FILAMENTS (LAMP); OXYGEN; SWITCHING; SWITCHING SYSTEMS;

ATOMS;

EID: 77958603421     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2069081     Document Type: Article

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