Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4938-4944

  Altermatt, Pietro P ^a   Schmidt, Jan ^b   Heiser, Gernot ^a   Aberle, Armin G ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; COULOMBIC INTERACTIONS; CRYSTALLINE SILICONS; DEVICE SIMULATORS; DOPING CONCENTRATION; DOPING DENSITIES; DOPING RANGE; EXPERIMENTAL DATA; HIGH DEGREE OF ACCURACY; INJECTION CARRIERS; INJECTION CONDITIONS; LIFETIME MEASUREMENTS; MOBILE CHARGE CARRIERS; N TYPE SILICON; NEW THEORY; P-TYPE SILICON; PARAMETERISATION; QUADRATIC FUNCTION;

CARRIER LIFETIME; CRYSTALLINE MATERIALS; OPEN CIRCUIT VOLTAGE;

AUGERS;

EID: 0000220982     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366360     Document Type: Article

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