The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in silicon

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Kessler, Michael ^a   Ohrdes, Tobias ^a   Altermatt, Pietro P ^b   Brendel, Rolf ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE VALUES; DEVICE MODELING; HIGH SPATIAL RESOLUTION; INDUCTIVE COUPLINGS; INJECTION CONDITIONS; INJECTION DENSITY; LIFETIME MAPPING; LOW-LEVEL INJECTION CONDITIONS; NUMERICAL DEVICE SIMULATION; SAMPLE SIZES; SHOCKLEY-READ-HALL RECOMBINATIONS;

BORON; CIRCUIT SIMULATION; ELECTROMAGNETIC INDUCTION;

SILICON WAFERS;

EID: 84858975993     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3691230     Document Type: Article

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