Noninvasive nature of corona charging on thermal Si/SiO 2 structures

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1844-1845

  Dautrich, M S ^a   Lenahan, P M ^a   Kang, A Y ^a   Conley Jr , J F ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORONA CHARGING TECHNIQUE; GATE BIASING; HIGH-FIELD STRESSING; OXIDE FIELD CORONA BIASING;

ANNEALING; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRON TRAPS; GATES (TRANSISTOR); OXIDES; PARAMAGNETIC RESONANCE; SILICA; SILICON WAFERS;

SEMICONDUCTOR DEVICES;

EID: 4944221095     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789576     Document Type: Article

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